Engineers introduce first synthetic charged domain wall in 2D material

In a first for the field, materials scientists from The Grainger College of Engineering at the University of Illinois ...
EurekAlert!

Deterministic field-free SOT switching via controlled domain wall chirality in easy-cone anisotropy

A team of researchers from the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) and Hebei University ...
Nasdaq

Quantum Computing Inc. Demonstrates that “Domain-Wall” Encoding Delivers the Best Performance for Solving Real-world Optimization Problems

LEESBURG, Va., Oct. 05, 2021 (GLOBE NEWSWIRE) -- Quantum Computing Inc. (the “company” or “QCI”) (Nasdaq: QUBT), a leader in bridging the power of classical and quantum computing, today announced ...
Nanowerk

Dual torque from electron spins drives magnetic domain wall displacement

Researchers discovered a new mechanism for faster, more efficient magnetic domain wall motion using dual spin torques in cobalt-iridium-platinum multilayers. In spintronic memory, information is ...
Semiconductor Engineering

Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories

A new technical paper titled “Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data” was published by researchers at UT Austin and Samsung Advanced ...
Semiconductor Engineering

Exploiting Domain Wall Conduction in Nitride Ferroelectrics As A New Type of Memristive FeRAM (Kiel Univ., Fraunhofer, NaMLab, TU Dresden)

A new technical paper titled “Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing” was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT ...